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C-Axis Textured, 2–3 μm Thick Al0.75Sc0.25N Movies Grown on… – Weblog • by NanoWorld®


Within the seek for lead-free, Si-microfabrication-compatible piezoelectric supplies, skinny movies of scandium-doped aluminum nitride (Al,Sc)N are of nice curiosity to be used in actuators, vitality harvesting, and micro-electromechanical-systems (MEMS).*

Whereas the piezoelectric response of AlN will increase upon doping with Sc, difficulties are encountered throughout movie preparation as a result of, as bulk solids with utterly totally different buildings and huge variations in cation radii, ScN (rock salt, cubic) and AlN (wurtzite, hexagonal) are immiscible. *

Consequently, (Al,Sc)N is inherently thermodynamically unstable and vulnerable to section segregation. Movie preparation is additional sophisticated by the technological requirement for polar [001] or [00 1̲] out-of-plane texture, which is achieved utilizing a seeding layer.*

Within the article “C-Axis Textured, 2–3 μm Thick Al0.75Sc0.25N Movies Grown on Chemically Shaped TiN/Ti Seeding Layers for MEMS Functions” Asaf Cohen, Hagai Cohen, Sidney R. Cohen, Sergey Khodorov, Yishay Feldman, Anna Kossoy, Ifat Kaplan-Ashiri, Anatoly Frenkel, Ellen Wachtel, Igor Lubomirsky and David Ehre suggest a protocol for efficiently depositing [001] textured, 2–3 µm thick movies of Al0.75Sc0.25N.*

The process depends on the truth that sputtered Ti is [001]-textured α-phase (hcp). Diffusion of nitrogen ions into the α-Ti movie throughout reactive sputtering of Al0.75,Sc0.25N possible types a [111]-oriented TiN intermediate layer. The lattice mismatch of this very skinny movie with Al0.75Sc0.25N is ~3.7%, offering glorious circumstances for epitaxial progress. In distinction to earlier studies, the Al0.75Sc0.25N movies ready within the present research are Al-terminated. Low progress stress (<100 MPa) permits movies as much as 3 µm thick to be deposited with out lack of orientation or lower in piezoelectric coefficient. *

A bonus of the proposed approach is that it’s appropriate with a wide range of substrates generally used for actuators or MEMS, as demonstrated right here for each Si wafers and D263 borosilicate glass. Moreover, thicker movies can doubtlessly result in elevated piezoelectric stress/pressure by supporting utility of upper voltage, however with out enhance within the magnitude of the electrical area. *

SEM, AFM, EDS, XRD and XPS strategies had been used for the movie characterization. For the nanoscale topography maps with atomic power microscopy (AFM) NanoWorld Pyrex-Nitride collection PNP-TRS silicon nitride AFM probes had been utilized in peak-force tapping mode. *

Figure 3 from Asaf Cohen et al. “C-Axis Textured, 2–3 μm Thick Al0.75Sc0.25N Films Grown on Chemically Formed TiN/Ti Seeding Layers for MEMS Applications”: AFM images of (a) a (100) silicon wafer following cleaning procedures as described in the Materials and Methods section; (b) 50 nm-thick Ti film deposited on the wafer at 300 K; (c) the same film following exposure to N2 plasma at 673 K for 30 min. For the nanoscale topography maps with atomic force microscopy (AFM) NanoWorld Pyrex-Nitride PNP-TRS AFM probes were used in peak-force tapping mode1. *
Determine 3 from Asaf Cohen et al. “C-Axis Textured, 2–3 μm Thick Al0.75Sc0.25N Movies Grown on Chemically Shaped TiN/Ti Seeding Layers for MEMS Functions”: AFM photos of (a) a (100) silicon wafer following cleansing procedures as described within the Supplies and Strategies part; (b) 50 nm-thick Ti movie deposited on the wafer at 300 Okay; (c) the identical movie following publicity to N2 plasma at 673 Okay for 30 min.

*Asaf Cohen, Hagai Cohen, Sidney R. Cohen, Sergey Khodorov, Yishay Feldman, Anna Kossoy, Ifat Kaplan-Ashiri, Anatoly Frenkel, Ellen Wachtel, Igor Lubomirsky and David Ehre
C-Axis Textured, 2–3 μm Thick Al0.75Sc0.25N Movies Grown on Chemically Shaped TiN/Ti Seeding Layers for MEMS Functions
Sensors 2022, 22, 7041
DOI: https://doi.org/10.3390/s22187041

The article “C-Axis Textured, 2–3 μm Thick Al0.75Sc0.25N Movies Grown on Chemically Shaped TiN/Ti Seeding Layers for MEMS Functions” by Asaf Cohen, Hagai Cohen, Sidney R. Cohen, Sergey Khodorov, Yishay Feldman, Anna Kossoy, Ifat Kaplan-Ashiri, Anatoly Frenkel, Ellen Wachtel, Igor Lubomirsky and David Ehre is licensed beneath a Inventive Commons Attribution 4.0 Worldwide License, which allows use, sharing, adaptation, distribution and copy in any medium or format, so long as you give acceptable credit score to the unique writer(s) and the supply, present a hyperlink to the Inventive Commons license, and point out if modifications had been made. The pictures or different third-party materials on this article are included within the article’s Inventive Commons license, until indicated in any other case in a credit score line to the fabric. If materials is just not included within the article’s Inventive Commons license and your supposed use is just not permitted by statutory regulation or exceeds the permitted use, you will want to acquire permission straight from the copyright holder. To view a replica of this license, go to https://creativecommons.org/licenses/by/4.0/.

1Peak Pressure Tapping® is a registered trademark of Bruker Company.

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